Arti cially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
نویسنده
چکیده
In recent years, new types of semiconductor heterostructures consisting of only one material in di1erent crystal structures, such as wurtzite/zinc-blende heterostructures (heteropolytypic structures) are under discussion. Such heterostructures maintain a completely defect-free, lattice matched, and coherent interface and e1ects due to di1erent chemical constituents can be avoided. In this eld, silicon carbide (SiC) is the most promising candidate because SiC crystallizes in more than two di1erent stable structures. The preparation of heteropolytypic structures by only a change of the crystal structure during the growth is a great challenge and is realized only under well-de ned conditions of molecular beam epitaxy (MBE). In this paper an overview is given of the results and conclusions of recent material research on the MBE growth, characterization and properties of SiC heteropolytypic structures and related materials. c © 2003 Elsevier Science B.V. All rights reserved. PACS: 81.15.Hi; 68.65.+g; 73.61.Le; 78.55.Hx; 82.60.Nh
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